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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF19030/D
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- -47 dBc @ 30 kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 4.5 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 17% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19030R3 MRF19030SR3
2.0 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
CASE 465E-03, STYLE 1 NI-400 MRF19030R3
CASE 465F-03, STYLE 1 NI-400S MRF19030SR3
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 83.3 0.48 -65 to +200 200 Unit Vdc Vdc Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 2.1 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 7
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF19030R3 MRF19030SR3 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps -- 13 -- dB Ciss Coss Crss -- -- -- 98.5 37 1.3 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.3 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
--
36
--
%
IMD
--
-31
--
dBc
IRL
--
-13
--
dB
Gps
12
13
--
dB
33
36
--
%
IMD
--
-31
-28
dBc
IRL
--
-13
-9
dB
No Degradation In Output Power Before and After Test
MRF19030R3 MRF19030SR3 2
MOTOROLA RF DEVICE DATA
VGG + C2
B1
B2
R3
B3
B4
B5
VDD + C8
R1
R2
C3
C4
R4
+ C6 C9
R5
C5
R6
R7
L2
L3 RF OUTPUT
Z6 RF INPUT Z5 DUT
Z7
Z8 C7 C10
Z9 L4
Z10
Z1 L1
Z2 C1
Z3
Z4
B1 - B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 - L4 R1 - R7 Z1 Z2
Short Ferrite Beads 10 pF Chip Capacitors, B Case 470 F, 35 V Electrolytic Capacitors 0.1 F Chip Capacitors, B Case 5.1 pF Chip Capacitors, B Case 22 F Tantalum Chip Capacitor 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Chip Resistors (0805) 0.080 x 0.595 Microstrip 0.080 x 0.600 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate
0.080 x 0.480 Microstrip 0.325 x 0.280 Microstrip 0.510 x 0.200 Microstrip 0.510 x 0.200 Microstrip 0.325 x 0.280 Microstrip 0.080 x 0.480 Microstrip 0.080 x 0.530 Microstrip 0.080 x 0.671 Microstrip 0.030 x 3.00 x 5.00 Glass Teflon, Arlon
Figure 1. MRF19030 Test Circuit Schematic
C2 C3 R1 B1 B2 R2 R3 R4 L2 C1 C4 B3 R5 C9 L3 C6 C7 L4 C5
C8
R6 B4
R7 B5
L1
C10
MRF19030 Rev. 0
Figure 2. MRF19030 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19030R3 MRF19030SR3 3
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 40 30 20 10 0 1900 IRL VDD = 26 Vdc IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps IMD 1920 1960 1980 1940 f, FREQUENCY (MHz) 2000 -30 -35 2020 -20 -25 -10 -15 45 40 ADJACENT CHANNEL POWER RATION (dB) IMD, INTERMODULATION DISTORTION (dBc) VDD = 26 Vdc IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) -20 -30 -40 -50 -60 -70 Gps CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 0 8 10 2 6 4 Pout, OUTPUT POWER (WATTS Avg.) CDMA -80 -90
35 30
2.25 MHz 25 885 kHz 15 10 5
20 1.25 MHz
-100 12
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 200 mA 300 mA 400 mA 350 mA 300 mA
-20 -30 -40 -50 -60 -70 -80 1.0
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing
3rd Order
5th Order
7th Order
-55 1.0
10 Pout, OUTPUT POWER (WATTS) PEP
100
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
15 14
Figure 6. Intermodulation Distortion Products versus Output Power
-22 -24 -26 -28 -30 -32 -34 -36 100 12 20 22 24 26 28 30 32 -38 34
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
14
400 mA 350 mA 300 mA 300 mA
13.5
f = 1960 MHz IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps
13
13
IMD
12
200 mA VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing
12.5
11 1.0
10 Pout, OUTPUT POWER (WATTS) PEP
VDD, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage
MRF19030R3 MRF19030SR3 4
MOTOROLA RF DEVICE DATA
Zo = 25 ZOL* f = 1930 MHz f = 1990 MHz Zin f = 1930 MHz f = 1990 MHz
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP f MHz 1930 1960 1990 Zin Zin 10.57 + j7.69 10.54 + j7.43 10.47 + j7.21 ZOL* 5.81 + j5.01 5.84 + j4.67 5.84 + j4.35
= Complex conjugate of source impedance.
ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Input Matching Network
Device Under Test
Output Matching Network
Z
in
Z
* OL
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF19030R3 MRF19030SR3 5
NOTES
MRF19030R3 MRF19030SR3 6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2X G B 1 2X K 2 2X D bbb N (LID) ccc
M M
Q
M
bbb
TB
M
A
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .003 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .110 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.07 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 2.79 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC
3 B
TA
M
B
M
TA
M
B E
M
ccc C
M
TA
M
B
M
R (LID) F
aaa
M
TA
M
B
M
M (INSULATOR) A
T
SEATING PLANE
S (INSULATOR) aaa
M
H B
M
TA
M
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A
CASE 465E-03 ISSUE D NI-400 MRF19030R3
2X D bbb M T A
1
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .003 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF
2
2X K R C
3 (LID)
ccc E
M
TA
M
B
M
ccc
M
TA
M
B
M
N
(LID)
F
A
A
(FLANGE)
T M
SEATING PLANE
H
S
(INSULATOR)
aaa B
(FLANGE)
M
TA
M
B
M
(INSULATOR)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
B
aaa
M
TA
M
B
M
CASE 465F-03 ISSUE B NI-400S MRF19030SR3
MOTOROLA RF DEVICE DATA
MRF19030R3 MRF19030SR3 7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF19030R3 MRF19030SR3 8
MOTOROLA RF DEVICE MRF19030/D DATA

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